Microwave enhanced ion-cut silicon layer transfer

The reason why thin-film silicon grows layer by layer in plasma-enhanced chemical vapor deposition

Thin-film Si grows layer by layer on Si(001)-(2 × 1):H in plasma-enhanced chemical vapor deposition. Here we investigate the reason why this occurs by using quantum chemical molecular dynamics and density functional theory calculations. We propose a dangling bond (DB) diffusion model as an alternative to the SiH3 diffusion model, which is in conflict with first-principles calculation results an...

Silicon Solar Cells with Nanoporous Silicon Layer

Smart-Cut Layer Transfer of Single-Crystal SiC Using Spin-on-Glass

The authors demonstrate “smart-cut”-type layer transfer of single-crystal silicon carbide (SiC) by using spinon-glass (SoG) as an adhesion layer. Using SoG as an adhesion layer is desirable because it can planarize the surface, facilitate an initial low temperature bond, and withstand the thermal stresses at high temperature where layer splitting occurs (800–900 °C). With SoG, the bonding of wa...

LOW-ENERGY-ION ENHANCED DIFFUSION AT THE SURFACE OF METALS

Radiation enhanced diffusion at the surface of metals has been observed and studied for low-energy nitrogen ions at the surface of copper. The displacement of the target atoms during irradiation creates vacancies and other defects near the surface, thus enhancing the diffusion of implanted materials toward the surface and also into the solid. The mechanism has been studied here by a specia...

Including a melting layer in microwave radiative transfer simulation for clouds

A simple method is presented for the inclusion of melting layer microwave radiative properties into cloud model simulations. These can be used for sensitivity studies of passive and active microwave signatures of rainclouds as well as for the generation of retrieval databases for aircraft and satellite radarrradiometer applications. Tables of bulk cloud cell microwave radiative Ž parameters ext...